LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F008SC-V/SCH-V offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
This document is a technical datasheet for the Sharp LH28F008SC-V/SCH-V flash memory devices. These are high-density, low-cost, nonvolatile read/write storage solutions utilizing Smart 5 technology. They offer symmetrically-blocked architecture with sixteen 64 k-byte erasable blocks and enhanced cycling capability of up to 1.6 million block erase cycles per chip.
| Capacity | 8 M-bit (1 M-byte) |
|---|---|
| Block Organization | Sixteen 64 k-byte blocks |
| Erase Cycles (Per Block) | 100,000 |
| Total Erase Cycles (Per Chip) | 1.6 million |
| Read Access Time (SC-V12/SCH-V12) | 120 ns @ 5.0±0.5V |
| Deep Power-Down Current (0°C to +70°C) | 10 pA |
The SC-V/SCH-V devices include Smart 5 Technology, Enhanced Suspend Capabilities, and In-System Block Locking.
Each block can be independently erased 100,000 times.
Data protection is enabled when Vpp is less than VPPLK.