This document discusses the differences between LDMOS and bipolar technology, and compares their parameters and performances. LDMOS is a type of field effect transistor (FET) with advantages over bipolar junction transistors (BJTs) including thermal stability, frequency stability, higher gain, higher ruggedness, lower noise, lower feedback capacitance, simpler bias circuitry, constant input impedance, better IMD performance, lower thermal resistance, and better AGC capability.