This document introduces the application of IGBT in automotive ignition system, and introduces the characteristics of IGBT and the advantages of using IGBT in automotive ignition system.
This document discusses the use of Insulated Gate Bipolar Transistors (IGBTs) in automotive ignition switches. It highlights that while IGBTs are typically used for high-speed switching, their ruggedness and low conduction losses make them ideal for the low-frequency, high-energy demands of car ignition systems.
The text details the specific requirements for an ignition switch, including breakdown voltage, current handling, and the Safe Operating Area (SOA). It explains how IGBTs can replace conventional points or transistors to improve performance at high RPMs and reliability. The document also covers input characteristics, temperature ranges (up to 150°C), and power dissipation considerations, noting that logic-level IGBTs like the STGP10N50L can be driven with low gate voltages.
| Temperature range | -40°C to 100°C (automotive under-hood) |
|---|---|
| Gate voltage for logic level IGBTs | as little as 3V |
| IGBT voltage range | 400V to 1500V |
They offer a compromise between switching speed, ruggedness, and power dissipation, specifically providing high peak current capability and simple gate drive requirements.
IGBTs allow for the use of low inductance, higher peak current ignition coils, resulting in improved performance at high RPMs and better firing of fouled plugs.
The components are expected to work in the range of -40°C to 100°C.