This document is a technical datasheet for the TOSHIBA 800EXH22, a silicon diffused type fast recovery diode. It specifies that the device is designed for high speed rectifier applications with a repetitive peak reverse voltage of 2500V and an average forward current of 800A.
| Repetitive Peak Reverse Voltage | 2500 V |
|---|---|
| Average Forward Current | 800 A |
| Reverse Recovery Time | 5us (MAX.) |
| Junction Temperature Range | -40~125 °C |
| Thermal Resistance (Junction to Fin) | 0.025 °C/W |
The device has a rated average forward current of 800 A.
This diode can withstand a repetitive peak reverse voltage of up to 2500 V.