BC372/D is a NPN type small signal silicon transistor produced by Motorola. Its maximum collector-emitter voltage is 100V, maximum collector-base voltage is 100V, maximum emitter-base voltage is 12V, maximum collector current is 1.0A, total power dissipation is 625mW, and operating temperature range is -55 to +150°C.
This document provides technical specifications for the Motorola BC372 (High Voltage) and BC373 (NPN Silicon) High Voltage Darlington Transistors. It details maximum ratings such as collector-emitter voltage of 100V and 80V respectively, along with continuous collector current limits.
| Collector-Emitter Voltage (BC372) | 100 Vdc |
|---|---|
| Continuous Collector Current | 1.0 Adc |
| Total Device Dissipation (Ta = 25°C) | 625 mW |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum collector-emitter voltage (VCES) for the BC372 is 100 Vdc.
The maximum thermal resistance, Junction to Ambient (Rava) is 200 °CIW.