This document is a technical datasheet from Korea Electronics Co., Ltd. (KEC) covering the BCW31 and BCW32 models of epitaxial planar NPN transistors. The device is designed for general-purpose and switching applications.
The datasheet provides maximum ratings including collector-emitter voltage, collector current, and power dissipation. It also lists specific electrical characteristics such as breakdown voltages, DC current gain ranges (110-220 for BCW31 and 200-450 for BCW32), saturation voltage, and noise figure.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 20 V |
| Emitter-Base Voltage | 3 V |
| Collector Current | 100 mA |
| Collector Power Dissipation | 350 mW |
| Junction Temperature | 150 C |
| DC Current Gain (BCW31) | 110 - 220 |
| DC Current Gain (BCW32) | 200 - 450 |
The maximum collector current is 100 mA.
The maximum power dissipation is 350 mW.
The typical collector-emitter saturation voltage is 0.25 V.