This document provides technical data for the TIP117 epitaxial planar PNP transistor, including its features and characteristics such as high DC current gain and low collector-emitter saturation voltage. The TIP117 is a monolithic transistor with built-in base-emitter shunt resistors, designed for industrial use.
This document is a technical datasheet for the KEC TIP117, an epitaxial planar PNP transistor designed for industrial use. It features built-in base-emitter shunt resistors and is complementary to the TIP112 model. The device is packaged in a TO-220AB case and is rated for a collector current of up to -2A DC and -4A pulse.
| Package Type | TO-220AB |
|---|---|
| Collector Current (DC) | -2 A |
| Collector Current (Pulse) | -4 A |
| Collector-Base Voltage | -100 V |
| Collector-Emitter Voltage | -100 V |
| Emitter-Base Voltage | -5 V |
| Collector Power Dissipation (Ta=25°C) | 2 W |
| Junction Temperature | 150 °C |
| DC Current Gain (hFE) Min | 1000 |
The minimum DC current gain (hFE) is 1000 at VCE=-4V and IC=-1A.
Yes, the TIP117 is complementary to the TIP112.
The maximum collector power dissipation is 2 W when the ambient temperature is 25°C.