SMAB110 is a Schottky barrier diode, low power loss, high efficiency, suitable for low voltage high frequency inverters, free wheeling and polarity protection applications
This document is a technical datasheet for the KEC SMAB110 Schottky Barrier Diode. It features a low profile surface mount package designed for low power loss and high efficiency. The component is intended for use in switching power supplies, DC/DC converters, home appliances, office equipment, and telecommunication systems.
| Maximum Repetitive Peak Reverse Voltage | 100 V |
|---|---|
| Average Output Rectified Current | 1 A |
| Peak One Cycle Surge Forward Current | 30 A |
| Junction Temperature Range | -40 to 125 C |
| Storage Temperature Range | -40 to 125 C |
| Peak Forward Voltage | 0.80 V |
| Repetitive Peak Reverse Current | 1 mA |
| Thermal Resistance Junction to Lead | 23 C/W |
The SMAB110 is designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
The maximum average output rectified current (IO) is 1 A.
The peak forward voltage (VFM) is 0.80 V when the forward current is 1.0 A.