2N7000A is a N-channel enhancement mode field effect transistor with low RDS(ON) and high density cell design, which can be used for interface and switching applications.
This document is a technical datasheet for the KEC 2N7000A, an N-channel enhancement mode field effect transistor designed for interface and switching applications. Key features include a high density cell design for low on-resistance, rugged reliability, and high saturation current capability.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-source voltage of 60V and continuous drain current of 200mA. It details static parameters like gate threshold voltage and dynamic characteristics including input capacitance and switching times.
| Package Type | TO-92 |
|---|---|
| Maximum Drain-Source Voltage | 60 V |
| Continuous Drain Current | 200 mA |
| Input Capacitance (Typical) | 20 pF |
The maximum junction temperature rating is 150°C.
Yes, the document states that this transistor is an electrostatic sensitive device and should be handled with caution.