TIP117F is a PNP type transistor manufactured by Mitsubishi Electric Corporation. It has a high current gain (hFE=1000) and low collector-emitter saturation voltage (VCE(sat)=-2.5V). It can be used for industrial applications.
This document is a technical datasheet for the KEC TIP117F, an epitaxial planar PNP transistor designed for industrial use. It features built-in base-emitter shunt resistors and offers high DC current gain with a minimum hFE of 1000 at specific conditions.
The datasheet provides comprehensive electrical characteristics including collector-base voltage ratings up to -100V, maximum collector current of -2A, and power dissipation details. It also includes graphical curves for collector current versus base-emitter voltage, saturation voltage, and safe operating area limits.
| Device Type | Epitaxial Planar PNP Transistor |
|---|---|
| DC Current Gain (Min) | 1000 |
| Collector-Base Voltage | -100 V |
| Collector-Emitter Voltage | -100 V |
| Emitter-Base Voltage | -5 V |
| Base Current (DC) | -50 mA |
The minimum DC current gain (hFE) is 1000 when VCE is -4V and IC is -1A.
The device supports a DC collector current of -2 A and a pulse collector current of -4 A.
Yes, it is stated that the device is complementary to the TIP112F.