TIP112F is a NPN transistor produced by SANYO. It has a maximum current of 2A and a maximum voltage of 100V. It has the characteristics of high current gain and low saturation voltage.
This document is a semiconductor technical data sheet for the KEC TIP112F, an epitaxial planar NPN transistor designed for industrial use. It features built-in base-emitter shunt resistors and is complementary to the TIP117F. The datasheet provides comprehensive information on maximum ratings, including a collector current of 2A and a power dissipation of 2W at 25°C.
| Collector Current (DC) | 2 A |
|---|---|
| Collector Power Dissipation | 2 W |
| Collector-Base Voltage | 100 V |
| Collector-Emitter Voltage | 100 V |
| DC Current Gain (hFE) | 1000 (Min.) |
| Junction Temperature | 150 |
Yes, the TIP112F is complementary to the TIP117F.
The maximum DC collector current is 2 A.
The minimum DC current gain is 1000.