Vishay BF996S N-Channel Dual Gate MOS-FET Datasheet

This document describes the BF996S model of Vishay Telefunken N-Channel dual gate MOS field-effect tetrode, which is mainly used for input and mixer stages in UHF tuners. The product features integrated gate protection diodes, low noise figure, low feedback capacitance, high cross modulation performance, low input capacitance, and high AGC-range.


Vishay BF996S N-Channel Dual Gate MOS-FET Datasheet - cover page
Brand
Vishay
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
98 KB
Published
04 July, 2012
Updated
29 September, 2023
MD5 checksum
8651E7977F4E989287125215B6166232

About this manual

This document is a technical datasheet for the Vishay BF996S, an N-channel dual gate MOS-field effect tetrode in depletion mode. The device features integrated gate protection diodes, low noise figure, and high cross-modulation performance, making it suitable for input- and mixer stages in UHF tuners.

What's inside

  • Applications
  • Features
  • Absolute Maximum Ratings
  • Electrical DC Characteristics
  • Electrical AC Characteristics
  • Common Source S-Parameters
  • Typical Characteristics

Specifications

Drain - source voltage20 V
Drain current30 mA
Total power dissipation200 mW
Channel temperature150 °C
Storage temperature range-65 to +150 °C
Forward transadmittance (Typ)18.5 mS

Frequently asked questions

What are the applications for the BF996S?

The device is intended for use in input- and mixer stages in UHF tuners.

What are the key features of this MOS-FET?

Key features include integrated gate protection diodes, low noise figure, low feedback capacitance, high cross modulation performance, and low input capacitance.

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