This document describes the features and characteristics of Vishay Telefunken's BUD616A silicon NPN high voltage switching transistor, including simple switch-off transistor (SWOT), HIGH SPEED technology, planar passivation, 100 kHz switching rate, very low switching losses, very low dynamic saturation, very low operating temperature, optimized reverse bias safe operating area (RBSOA), and high reverse voltage.
This document is a technical datasheet for the Vishay Telefunken BUD616A, a Silicon NPN High Voltage Switching Transistor. It highlights key features such as HIGH SPEED technology, low switching losses, and optimized RBSOA characteristics suitable for electronic lamp ballast circuits and switch-mode power supplies.
The document provides comprehensive technical data including absolute maximum ratings (up to 1000V collector-emitter voltage), electrical characteristics like current transfer ratios, and detailed switching performance under resistive and inductive loads. It also includes typical characteristic curves and ordering information.
| Collector-emitter voltage (VCEO) | 450 V |
|---|---|
| Emitter-base voltage (VEBO) | 12 V |
| Collector current (IC) | 1.6 A |
| Junction temperature (Tj) | 150 °C |
It is suitable for electronic lamp ballast circuits and switch-mode power supplies.
Yes, for ordering TO 252 add SMD to the type number (i.e. BUD616A –SMD).