The BF998/BF998R/BF998RW is a dual-gate N-channel MOS field-effect tetrode, depletion mode. This electrostatic sensitive device. Observe precautions for handling. This product is mainly used in UHF tuner input and mixer stages. Product features include: integrated gate protection diodes, low noise figure, low feedback capacitance, high cross modulation performance, low input capacitance, high AGC range and high gain.
This document provides technical specifications for the Vishay BF998, BF998R, and BF998RW N-Channel Dual Gate MOS-FET tetrodes operating in depletion mode. These devices are designed for use in input and mixer stages within UHF tuners, featuring low noise figures and high gain.
| Drain - source voltage | 12 V |
|---|---|
| Drain current | 30 mA |
| Channel temperature | 150 °C |
| Forward transadmittance | 21 mS |
The maximum total power dissipation is 200 mW when the ambient temperature is below 60 °C.
The maximum drain-source voltage rating is 12 V.
The device can be stored between -65 °C and +150 °C.