The 2N7000KL/BS170KL is a N-channel 60-V (D-S) MOSFET with ESD protection, and is suitable for direct logic-level interface, solid state relays, drivers, etc.
The document provides technical specifications for the Vishay Siliconix 2N7000KL and BS170KL devices. These are N-channel 60-V (D-S) MOSFETs featuring TrenchFET technology and ESD protection up to 2000 Vps.
The datasheet details absolute maximum ratings, electrical specifications, and typical characteristics including output characteristics, transfer characteristics, on-resistance vs. drain current, gate charge, source-drain diode forward voltage, capacitance, and safe operating areas.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current (Tj = 150°C) | 0.47 A |
| Pulsed Drain Current | 1.0 A |
| Power Dissipation (Ta = 25°C) | 0.8 W |
| Maximum Junction-to-Ambient Thermal Resistance | 156 °C/W |
| Operating and Storage Temperature Range | -55 to 150 °C |
The maximum continuous drain current is 0.37 A when the junction temperature is 150°C.
The device operates and stores within a temperature range of -55 to 150 °C.
The maximum junction-to-ambient thermal resistance is 156 °C/W.