BF995 is an N-channel dual gate MOS field-effect tetrode with integrated gate protection diodes, high cross modulation performance, low noise figure, high AGC range, and low feedback capacitance.
This document is a datasheet for the Vishay BF995, an N-channel dual gate MOS-FET operating in depletion mode. The device is designed for use in input and mixer stages of FM and VHF TV tuners, supporting frequencies up to 300 MHz. Key features include integrated gate protection diodes, high cross-modulation performance, and low feedback capacitance.
| Drain - source voltage | 20 V |
|---|---|
| Drain current | 30 mA |
| Channel temperature | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Forward transadmittance | 12 to 15 mS |
The maximum drain-source voltage is 20 V.
The maximum channel temperature is 150 C.