BF979 is a silicon PNP planar RF transistor produced by Vishay Telefunken, with high cross modulation performance, high power gain, low noise and high reverse attenuation.
This document is a datasheet for the Vishay BF979 Silicon PNP Planar RF Transistor. It provides technical data including absolute maximum ratings, electrical DC and AC characteristics, and typical performance graphs. The device is designed for UHF/VHF uncontrolled prestages requiring low noise and low modulation.
| Collector-base voltage | 20 V |
|---|---|
| Collector-emitter voltage | 20 V |
| Emitter-base voltage | 3 V |
| Collector current | 50 mA |
| Junction temperature | 150 /C0176C |
| Storage temperature range | -55 to +150 /C0176C |
It is used for UHF/VHF uncontrolled prestages with low noise and low modulation.
The BF979 is housed in a plastic case (TO 50).
The marking on the component is simply BF979.