This is a datasheet for BF966S, introducing the features and characteristics of this product, including application scenarios, absolute maximum ratings, maximum thermal resistance, electrical DC characteristics, etc.
This document is a datasheet for the Vishay BF966S, an N-Channel Dual Gate MOS-FET tetrode operating in depletion mode. It is designed for use in input and mixer stages, particularly in UHF-tuners. Key features include integrated gate protection diodes, high cross-modulation performance, and low noise figures. The device is housed in a plastic TO-50 case with pins designated for Drain, Source, Gate 1, and Gate 2.
| Package Type | Plastic case (TO 50) |
|---|---|
| Pin Configuration | 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 |
| Drain - source voltage | 20 V |
| Drain current | 30 mA |
| Total power dissipation | 200 mW |
| Channel temperature | 150 °C |
| Storage temperature range | -55 to +150 °C |
The maximum channel temperature is 150°C.