The LM113 and LM313 are temperature compensated, low voltage reference diodes. They feature extremely tight regulation over a wide range of operating currents in addition to an unusually low breakdown voltage and good temperature stability. The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly predictable properties of components in the IC, so they can be manufactured and supplied to tight tolerances.
The LM113 and LM313 are temperature compensated, low voltage reference diodes synthesized using transistors and resistors in a monolithic integrated circuit. They feature extremely tight regulation over a wide range of operating currents, an unusually low breakdown voltage, and good temperature stability.
These devices are recommended for use in bias-regulation circuitry, low-voltage power supplies, or battery-powered equipment. The output voltage depends on the energy-band gap voltage of silicon, making them useful for temperature compensation and measurement functions.
| Reverse Breakdown Voltage (Typ) | 1.220V |
|---|---|
| Dynamic Impedance (Typ) | 0.3 X |
| Temperature Stability (LM113) | 1% over -55C to +125C |
| Operating Temperature Range (LM313) | 0C to +70C |
The typical reverse breakdown voltage is 1.220V at a current of 1mA.
They are recommended for use in bias-regulation circuitry, low-voltage power supplies, or battery powered equipment.
The dynamic impedance ranges from 0.3 X from 500 mA to 20 mA.