BC556, BC557, BC558 are three PNP silicon amplifier transistors from MCC. They have a maximum power dissipation of 625mW, a storage temperature range of -55 to 150 degrees Celsius, and a TO-92 plastic package.
This document is a technical datasheet for the Micro Commercial Components (MCC) series of NPN silicon amplifier transistors, specifically models BC556, BC557, and BC558. The devices are housed in TO-92 molded plastic packages and feature a maximum junction temperature rating of 150°C.
The datasheet provides comprehensive electrical characteristics including breakdown voltages for collector-emitter, collector-base, and emitter-base terminals. It details DC current gain (hFE) variations across different sub-models (A, B, C), saturation voltages, small-signal parameters like bandwidth product (fT), and capacitance values under specified operating conditions.
| Package Type | TO-92, Molded Plastic |
|---|---|
| Junction Temperature Max | 150°C |
| Collector-Emitter Voltage (BC556) | -65 V |
| Collector Current Max | -100 mA |
| Power Dissipation (25°C) | 625mW |
The device supports a junction temperature of up to 150°C.
The BC556 transistor has a maximum collector-emitter voltage of 65 V.
The BC557C transistor has a minimum DC current gain of 420.