NEC UPD23C256E Data Sheet


NEC UPD23C256E Data Sheet  - cover page
Brand
NEC
Category
Memory
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
100 KB
Published
12 June, 2012
Updated
12 June, 2012
MD5 checksum
F97312DDD83EB835E0A1C3D7FD5AEA36

About this manual

The document describes the NEC PD23C256E, a 262,144-bit Read-only Memory (ROM) utilizing CMOS silicon gate technology. The device is organized as 32,768 words by 8 bits and features three-state outputs that are fully TTL-compatible.

What's inside

  • Description
  • Features
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Characteristics
  • AC Characteristics
  • Timing Waveform

Specifications

Organization32,768-word by 8-bit
Capacity262,144-bit
Power Supply Range+2.5V to +6.0V
Storage Temperature-85°C to +150°C

Frequently asked questions

What is the memory organization of the PD23C256E?

The device is organized as 32,768 words by 8 bits.

How much current does the chip draw in standby mode?

The device draws a maximum of 30µA in standby mode.

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