The µPA835TC is an NPN silicon RF twin transistor with low noise and high gain characteristics, suitable for low noise amplification applications in the VHF to UHF band.
The NEC uPA835TC is an NPN silicon epitaxial transistor designed with two different elements (Q1 and Q2) built into a single flat-lead 6-pin thin-type ultra super minimold package. It is intended for low noise amplification in the VHF to UHF band.
The device features two distinct transistors optimized for specific frequencies: Q1 operates at 2 GHz with a typical noise figure of 1.5 dB, while Q2 operates at 1 GHz with a typical noise figure of 1.2 dB. Both elements provide high gain and are suitable for RF applications requiring compact integration.
| Package Type | Flat-lead 6-pin thin-type ultra super minimold package |
|---|---|
| Q1 Noise Figure (Typ) | 1.5 dB @ f=2 GHz |
| Q2 Noise Figure (Typ) | 1.2 dB @ f=1 GHz |
| Collector to Base Voltage (Max) | 9 V |
| Total Power Dissipation (2 elements) | 230 mW |
It is an NPN silicon RF twin transistor designed for low noise amplification in the VHF band to UHF band.
The total power dissipation is 230 mW in 2 elements.
The storage temperature range is -65 to +150 °C.