NUP2301MW6T1 is a low capacitance diode array designed to protect two data lines from harmful electrical transients such as electrostatic discharge (ESD). It features low capacitance, single package integration design, protection for JEDEC standards, and IEC61000−4−2 (Level 4) protection.
The NUP2301MW6T1 is a Microlntegration™ device engineered to protect sensitive components from electrical transients such as electrostatic discharge (ESD). It features single package integration and ensures data line speed and integrity while directing transients to either the positive side or ground. The device offers protection for various standards including JEDEC JESD22 Class C/HBM Class 3B and IEC61000-4-2 Level 4.
| Reverse Voltage (VR) | 70 Vdc |
|---|---|
| Forward Current (IF) | 200 mAdc |
| Peak Forward Surge Current (IFM) | 500 mAdc |
| Repetitive Peak Reverse Voltage (VRRM) | 70 Vv |
| Repetitive Peak Forward Current (IFRM) | 450 mA |
| Capacitance between I/O pins | 2.0 pF Maximum |
The device has a maximum capacitance of 2.0 pF between I/O lines.
The device can handle a peak forward surge current of 500 mA.
The maximum junction temperature is +150°C.