This document is about the maximum ratings, thermal characteristics, electrical characteristics of MPS2907A/D device, including collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current.
This document is a datasheet for the MPS2907A PNP silicon transistor, published by ON Semiconductor. It details maximum ratings, electrical characteristics, and thermal properties for general-purpose applications. The device is available in TO-92 packages with various ordering styles including tape and reel and ammo packs.
| Collector–Emitter Voltage | -60 Vdc |
|---|---|
| Collector Current | -600 mAdc |
| Total Device Dissipation @ TA = 25°C | 625 mW |
| Operating and Storage Junction Temperature Range | -55 to +150°C |
| Thermal Resistance, Junction to Ambient | 200 °C/W |
| Current–Gain – Bandwidth Product | 200 MHz |
| Collector–Emitter Saturation Voltage | -0.4 to -1.6 Vdc |
The maximum continuous collector current is -600 mAdc.
The operating and storage junction temperature range is -55 to +150°C.
The collector-emitter breakdown voltage is -60 Vdc.