This document is a SPICE device model guideline, describing the features and characteristics of the Si9936BDY model. The model is applicable for both linear and switching applications, with high accuracy over the -55 to 125°C temperature range. The model parameters are optimized to provide the best fit to the measured data.
The attached SPICE device model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature range under pulsed 0 to 10V gate drive conditions.
This document serves as a modeling guideline rather than a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges.
The model is optimized under a pulsed 0 to 10V gate drive.