This document describes the features and characteristics of Vishay Telefunken's BZM55B product. It is a silicon epitaxial planar Z-diode that is hermetically sealed and fits onto SOD 323 / SOT 23 footprints. The electrical data is identical to the devices BZT55B and TZMB. It has a very sharp reverse characteristic, low reverse current level, very high stability, low noise, and is available with tighter tolerances. It is commonly used for voltage stabilization applications.
This document is a datasheet for the Vishay BZM55B series of Silicon Epitaxial Planar Z-Diodes. It details the product's features, including hermetic sealing and suitability for SOD 323 and SOT 23 footprints. The device is designed for voltage stabilization applications, offering high stability and low noise. This manual is written in Chinese.
| Junction temperature | 175 °C |
|---|---|
| Storage temperature range | -65...+175 °C |
| VZ tolerance | ± 2% |
| Forward voltage (IF=200mA) | 1.5V |
The primary application is voltage stabilization.
The maximum junction temperature is 175 °C.