This document describes the features and characteristics of Vishay Telefunken's 1N5221B to 1N5267B silicon Z-diodes, including very sharp reverse characteristic, very high stability, low reverse current level, and VZ tolerance of ±5%. The product is suitable for voltage stabilization.
This document is a technical datasheet for the Vishay Telefunken series of Silicon Z-diodes, specifically models ranging from 1N5221B to 1N5267B. It outlines key features such as sharp reverse characteristics and high stability, along with applications in voltage stabilization circuits.
The document provides absolute maximum ratings for power dissipation, junction temperature, and thermal resistance. Detailed electrical characteristics are listed for each model number, specifying Zener voltage (VZ), test current (IZT), dynamic impedance (rzjT), knee current (IZK), reverse current (IR), and temperature coefficient (RTKVZ). Physical dimensions and packaging standards are also included.
| Power dissipation | 500 mW |
|---|---|
| Junction temperature | 200 °C |
| Storage temperature range | -65...+200 °C |
| Maximum Thermal Resistance (Junction ambient) | 300 K/W |
| Z–tolerance | ± 5% |
The maximum junction temperature is 200 °C.
The maximum weight is 0.3g.