MRF1090MA and MRF1090MB1 are RF devices produced by Motorola, designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.
This datasheet provides technical specifications for the Motorola MRF1090MA and MRF1090MB, which are NPN silicon microwave pulse power transistors. These devices are specifically designed for Class B and CG common base amplifier applications in short-pulse TACAN, IFF, and DME transmitters.
| Output Power (Peak) | 90 Watts |
|---|---|
| Frequency Range | 960-1215 MHz |
| Collector-Base Voltage (Max) | 70 Vdc |
| Emitter-Base Voltage (Max) | 4.0 Vdc |
| Collector Current (Peak) | 6.0 Adc |
| Total Device Dissipation @ Tc = 25°C | 290 Watts |
| Storage Temperature Range | -65 to +150 °C |
| Thermal Resistance, Junction to Case | 0.6 °C/W |
They are designed for Class B and CG common base amplifier applications in short-pulse TACAN, IFF, and DME transmitters.
The minimum gain is 8.4 dB.