This document provides preliminary information on a new product currently under development or evaluation. The product is a high-density NAND flash memory with storage capacities of 4Gbit and 8Gbit, suitable for mass storage applications. It features an x8 bus width NAND interface, operates at a supply voltage of 3.0V, and has a page size of 2048 bytes and a block size of 128K bytes. The product offers fast random and sequential access speeds, supports fast block erase, and has a data retention of up to 10 years. It also includes hardware and software data protection, chip enable and serial number options. The product is packaged in ECOPACK® and comes with development tools and reference software.
The document details the NAND04GW3B2B and NAND08GW3B2A, which are 4 Gbit and 8 Gbit non-volatile Flash memories operating from a 3V supply. These devices utilize NAND cell technology with a page size of 2112 Bytes (2048 data + 64 spare) and support an x8 bus width with multiplexed address and data lines.
| Memory Density | 4 Gbit, 8 Gbit |
|---|---|
| Supply Voltage | 3.0V |
| Page Size | 2112 Bytes |
| Bus Width | x8 |
| Program/Erase Cycles | 100,000 |
| Data Retention | 10 years |
| Package Type | TSOP48 |
The page size is 2112 Bytes, consisting of 2048 data bytes and 64 spare bytes.
Yes, they feature Cache Program and Cache Read modes to improve program and read throughputs for large files.
Each block can be programmed and erased over 100,000 cycles.