This document details the features and characteristics of the KSR1105 NPN Epitaxial Silicon Transistor, including absolute maximum ratings, electrical characteristics, symbol parameters test conditions, etc.
The document describes the Fairchild Semiconductor KSR1105, a switching application integrated circuit designed for use in inverter and interface circuits. It features a built-in bias resistor (Ry) with values of 4.7kΩ or 10kΩ, serving as a complement to the KSR2105 model. The device is housed in a 4-pin SOT-23 package.
| Collector-Base Voltage | 50 V |
|---|---|
| Collector-Emitter Voltage | 50 V |
| Emitter-Base Voltage | 10 V |
| Collector Current | 100 mA |
| Collector Power Dissipation | 200 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
| DC Current Gain | 30 |
| Current Gain-Bandwidth Product | 250 MHz |
| Input Resistor | 3.2 47 6.2 KQ |
The built-in bias resistor (Ry) has values of 4.7kΩ or 10kΩ.
The KSR1105 is available in a 4-pin SOT-23 package.
The maximum junction temperature is 150 °C.