The TPIC5403 is a monolithic gate-protected power DMOS array that consists of four independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000V of ESD protection when tested using the human-body model of a 100pF capacitor in series with a 1.5kΩ resistor.
The TPIC5403 is a monolithic gate-protected power array consisting of four independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (Zoxg and Zcxp) to prevent gate damage during overstress conditions and provides up to 4000 V of ESD protection using the human-body model.
The device is offered in a 24-pin wide-body surface-mount (DW) package. It is characterized for operation over a case temperature range of -40°C to 125°C, with an operating virtual junction temperature range from -40°C to 150°C.
| Drain-to-source breakdown voltage | 60 V |
|---|---|
| Continuous drain current per output | 11.25 A |
| ESD protection capability | 4000 V |
| Operating case temperature range | -40°C to 125°C |
| Junction-to-ambient thermal resistance | 90 °C/W |