This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDJ1027P P-Channel 1.8V specified PowerTrench MOSFET, which is suitable for battery management/charger applications and load switches.
This datasheet details the electrical and thermal characteristics of the FDJ1027P, a dual P-Channel MOSFET designed for battery management applications. It features low gate charge, high current handling, and an optimized FLMP SC75 package for thermal performance. Key specifications include a maximum drain current of -2.8A, on-resistance varying from 160mΩ to 390mΩ depending on voltage, and thermal resistance of 80°C/W when mounted on a tin pad. The document includes typical characteristics, switching parameters, and application notes for proper use in power circuits.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | 48 V |
| Drain Current (Continuous) | -2.8 A |
| Thermal Resistance (Junction-to-Ambient) | 80 °C/W |
| Gate Threshold Voltage | -0.4 V to -1.5 V |
The maximum continuous drain current is -2.8 A.
The thermal resistance (junction-to-ambient) is 80°C/W when mounted on a tin pad.