This document is about FOD817 phototransistor optocouplers, which consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
This datasheet describes the FOD817 Series optocouplers, which combine a gallium arsenide infrared LED with a silicon phototransistor in a 4-pin package. Key specs include C-UL, UL, and VDE approval, 5000 Vrms isolation voltage, and current transfer ratios ranging from 50% to 600% depending on variant. The document covers electrical characteristics, application notes, and package dimensions for through-hole and surface-mount versions.
| Current Transfer Ratio | FOD817: 50-600%, FOD817A: 80-160%, FOD817B: 130-260%, FOD817C: 200-400%, FOD817D: 300-600% |
|---|---|
| Input-Output Isolation Voltage | 5000 Vrms |
| Operating Temperature | -30 to +100°C |
| Collector-Emitter Breakdown Voltage | 70 V |
The current transfer ratio varies by variant: FOD817: 50-600%, FOD817A: 80-160%, FOD817B: 130-260%, FOD817C: 200-400%, FOD817D: 300-600%.
The input-output isolation voltage is 5000 Vrms.
The operating temperature range is -30°C to +100°C.