This document is the LED55B/LED55C/LED56 datasheet, which introduces the product's features, parameters, and appearance dimensions.
This datasheet details the LED55B, LED55C, and LED56 GaAs infrared emitting diodes from Fairchild Semiconductor. These devices operate at 940 nm wavelength and are housed in a narrow-angle TO-46 package. Key specifications include forward voltage, power dissipation, and emission angle. The document also provides absolute maximum ratings and typical performance curves for forward voltage, power output, and radiation pattern.
The datasheet includes electrical/optical characteristics such as peak emission wavelength, total power output, and rise/fall times. It also covers thermal derating and application guidelines, including soldering temperatures and cleaning agents. A disclaimer notes that Fairchild reserves the right to change specifications without notice and does not assume liability for use in life support systems without approval.
| Peak Emission Wavelength | 940 nm |
|---|---|
| Forward Voltage | 1.7 V |
| Total Power (LED55B) | 3.5 mW |
| Total Power (LED55C) | 5.4 mW |
| Total Power (LED56) | 1.5 mW |
| Rise Time | 1.0 μs |
| Fall Time | 1.0 μs |
| Operating Temperature | -65 to +125°C |
| Storage Temperature | -65 to +150°C |
| Continuous Forward Current | 100 mA |
The peak emission wavelength is 940 nm.
The forward voltage is 1.7 V.
The total power output for the LED55B is 3.5 mW.
The operating temperature range is -65 to +125°C.