The FDS6892AZ is a dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET produced by Fairchild Semiconductor, which is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The FDS6892AZ is a dual N-channel MOSFET designed for low-voltage, battery-powered applications. It features low on-state resistance and fast switching for reduced power loss. The device is built using Fairchild’s PowerTrench process, enabling high current and power handling with low gate charge. It is rated for 75A continuous drain current and 20V drain-source voltage. Thermal performance is specified for various mounting configurations, with junction-to-ambient thermal resistance of 78°C/W for dual operation.
The datasheet includes electrical characteristics, typical performance curves, and thermal data. It covers on-resistance variation with temperature and drain current, gate charge, capacitance, and switching times. Maximum safe operating area and transient thermal response are also detailed. The document is a preliminary datasheet for a product in full production, with no guarantee of future revisions.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | ±12 V |
| Continuous Drain Current | 7.5 A |
| On-State Resistance @ 4.5V | 18 Ω |
| On-State Resistance @ 2.5V | 24 Ω |
| Gate Charge | 12 nC |
| Thermal Resistance (Junction-to-Ambient) | 78°C/W |
| Gate Threshold Voltage | 1.0 V |
20 V.
12 nC.
18 Ω.
78°C/W.