The ISL9N304AP3/ISL9N304AS3ST is an N-channel logic level UltraFET® trench MOSFET with a drain-to-source voltage of 30V, a maximum drain current of 75A, and an on-resistance of 4.5mΩ. This device utilizes advanced trench MOSFET technology and features low gate charge and low on-resistance. It is optimized for switching applications, improving the overall efficiency of DC/DC converters and enabling operation at higher switching frequencies.
This datasheet details the electrical and thermal characteristics of Fairchild's ISL9N304AP3 and ISL9N304AS3ST N-Channel Logic Level UltraFET® Trench MOSFETs. It includes maximum ratings, switching times, gate charge, and thermal resistance data. The devices are optimized for switching applications in DC/DC converters, supporting higher frequencies and improved efficiency.
The document provides application guidelines for thermal management, including equations for calculating junction temperature and power dissipation based on ambient temperature and mounting pad area. It also includes typical characteristics and test circuits for design evaluation.
| Drain to Source Voltage | 30 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (25°C) | 75 A |
| Drain to Source On Resistance | 4.5 mΩ |
| Gate Charge at 10V | 105 nC |
| Thermal Resistance Junction to Ambient | 62 °C/W |
| Package Type | TO-263AB / TO-220AB |
75 A at 25°C with Vgg = 10V.
105 nC total gate charge at 10V.
62 °C/W.
TO-263AB for ISL9N304AS3ST and TO-220AB for ISL9N304AP3.