NDS9955 is a dual N-channel enhancement mode power field effect transistor, suitable for low voltage applications, with features such as fast switching, low power loss, and resistance to transients.
The document describes the Fairchild Semiconductor NDS9955, a dual N-channel enhancement mode power field effect transistor produced using proprietary DMOS technology. It is designed for low voltage applications such as disk drive motor control and battery-powered circuits where fast switching and low in-line power loss are required.
The datasheet provides absolute maximum ratings, electrical characteristics including on-resistance and breakdown voltage, dynamic characteristics like capacitance, and switching parameters. It also details package dimensions for the SO-8 surface mount configuration and tape-and-reel shipping specifications.
| Drain-Source Voltage | 50 V |
|---|---|
| Continuous Drain Current | 3 A |
| Pulsed Drain Current | 10 A |
| Power Dissipation (Dual) | 2 W |
| Operating Temperature Range | -55 to 150 °C |
The maximum continuous drain current for the NDS9955 is 3 A.
The maximum continuous drain current is rated at 3 A.
The device operates and stores in a temperature range of -55 to 150 °C.
The maximum power dissipation for dual operation is 2 W.