M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory with fast access time, fast programming time, and low power consumption
The document describes the M29F100 series of non-volatile flash memories available in 1 Mbit (128Kb x8 or 64Kb x16) configurations. These devices operate with a single 5V supply and support fast access times of 70ns, along with byte-by-byte or word-by-word programming modes.
Key features include an internal Program/Erase Controller that manages block erase operations, which can be suspended to allow reading or writing other blocks. The memory architecture includes separate Boot, Parameter, and Main blocks, each capable of being individually protected against erasure and reprogramming.
| Capacity | 1 Mbit (128Kb x8 or 64Kb x16) |
|---|---|
| Supply Voltage | 5V + 10% |
| Access Time | 70ns |
| Program Time (Byte) | 10us typical |
| Erase Cycles per Block | 100,000 cycles |
| Data Retention | 20 years |
| Operating Temperature Range | -40 to 125 °C |
The device is organized as 128Kb x8 or 64Kb x16 bits, selectable by the BYTE signal.
Yes, the block erase operation can be suspended to read from or program other blocks.
Both devices feature an array of 5 blocks: one Boot Block, two Parameter Blocks, and two Main Blocks.