1N5615 is an NPN-type Schottky diode produced by ON Semiconductor
This document provides technical specifications for the Microsemi Corp. 1N5615 through 1N5623 series of military rectifiers. Key features include a microminiature voidless hermetically sealed glass package with triple layer passivation and metallurgical bonding.
The datasheet details maximum ratings such as an operating temperature range of -65°C to +175°C, surge current capabilities up to 25A, and peak inverse voltages ranging from 200V to 1000V. It also includes electrical characteristics tables for average rectified current, forward voltage drop, reverse leakage current, and junction capacitance across the series.
| Storage Temperature Range | -65°C to +200°C |
|---|---|
| Thermal Resistance | 38°C/W |
| Surge Current | 25A |
| Package Type | Voidless Hermetically Sealed Glass Package |
The Peak Inverse Voltage (PIV) ranges from 200 Volts to 1000 Volts depending on the specific model.
The maximum surge current rating for these rectifiers is 25 Amperes.