The TGF4124-EPU is a RF power amplifier from TriQuint Semiconductor. It has a 0.5 um gate finger length, a rated output power of 12 Watts, a rated power added efficiency of 51.5% and a rated gain of 10.8 dB.
This document provides technical specifications for the TGF4124-EPU, a 24 mm discrete High Electron Mobility Transistor (HFET). Key nominal performance metrics at 2.3 GHz include an output power of 12 Watts, a Power Added Efficiency (PAE) of 51.5%, and a gain of 10.8 dB.
| Gate Finger Length | 0.5 um |
|---|---|
| Nominal Pout at 2.3 GHz | 12 Watts |
| Nominal PAE at 2.3 GHz | 51.5% |
| Nominal Gain at 2.3 GHz | 10.8 dB |
| Die Size | 36.0 x 81.0 x 4.0 mils |
| Drain Saturation Current (IDSS) | 5880 mA |
| Transconductance (GM) | 3960 ms |
| Pinch Off Voltage (VP) | -1.85 V |
The device supports an operating channel temperature from 0°C to 200°C.
A minimum of four gate bonds and eight drain bonds is recommended.