This document mainly introduces the features and performance of the TGA1055-EPU RF power amplifier. The product uses 0.25um pHEMT technology, has a nominal gain of 20dB and a nominal output power of 2W. The main applications are LMDS, point-to-point radio and satellite ground terminals.
This document provides advance product information and preliminary performance data for the TriQuint Semiconductor TGA1055-EPU, a Ka Band 2 Watt Power Amplifier. The device utilizes 0.25 um pHEMT technology to deliver a nominal gain of 20 dB and a nominal output power (Pout) of 2W at -30 dBc IMR3 with an input signal level (SCL) of 26 dBm.
| Technology | 0.25 um pHEMT Technology |
|---|---|
| Nominal Gain | 20 dB |
| Nominal Pout | 2W |
| IMR3 @ 26 dBm SCL | -30 dBc |
| Bias Voltage | 7V |
| Bias Current | 1.4A |
| Chip Dimensions | 5.89 mm x 3.66 mm |
The document states that currently shipping units are Engineering Prototype Units.
The device has a nominal output power of 2W.
The recommended bias is 7V at 1.4A.
The chip dimensions are 5.89 mm x 3.66 mm.