The TriQuint TGS8122-SCC is a monolithic single-pole, double-throw (SPDT) GaAs FET switch designed for 8 to 11 GHz. It has low insertion loss, low current consumption, and fast rise/fall time, making it ideal for high-speed switching radar and communication systems.
The TGF4112-EPU is a microwave amplifier from TriQuint with a typical output power of 6.0 watts, a nominal power added efficiency of 54.5%, and a nominal gain of 12.7 dB.
The TGF2022-06 is a TriQuint 0.6mm pHEMT operating from DC-20GHz. This device provides >28 dBm of saturated output power and 13 dB of power gain. The TGF2022-06 is well suited for high efficiency applications such as point-to-point radio, high reliability space, and military applications.
The TGF4118-EPU is a 18 mm discrete HFET with a nominal Pout of 9.0 Watts at 2.3 GHz, a nominal PAE of 53% at 2.3 GHz, and a nominal Gain of 11.5 dB at 2.3 GHz.
This document mainly introduces the features and performance of the TGA1055-EPU RF power amplifier. The product uses 0.25um pHEMT technology, has a nominal gain of 20dB and a nominal output power of 2W. The main applications are LMDS, point-to-point radio and satellite ground terminals.
The TGF4124-EPU is a RF power amplifier from TriQuint Semiconductor. It has a 0.5 um gate finger length, a rated output power of 12 Watts, a rated power added efficiency of 51.5% and a rated gain of 10.8 dB.
The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN front-ends. The device achieves a noise figure as low as 0.55 dB with 15 dB associated gain at 1.8 GHz. It is packaged in a low-cost SOT343 package and is 100% DC tested before packaging/RF LAT after packaging.
