The TGF4118-EPU is a 18 mm discrete HFET with a nominal Pout of 9.0 Watts at 2.3 GHz, a nominal PAE of 53% at 2.3 GHz, and a nominal Gain of 11.5 dB at 2.3 GHz.
The TGF4118‑EPU HFET provides high‑power RF performance, offering a nominal output of 9.0 W, 53 % power‑added efficiency, and 11.5 dB gain at 2.3 GHz. Electrical characteristics such as drain saturation current, transconductance, and breakdown voltages are listed, along with DC I‑V curves and linear model parameters.
The document also includes a mechanical drawing, thermal model equations, and an application circuit for 2.3 GHz operation. Recommended bonding (four gate bonds, eight drain bonds) and soldering procedures (AuSn 80/20 at 300 °C) are provided, as well as absolute maximum ratings and thermal life predictions.
| Nominal Output Power | 9.0 W at 2.3 GHz |
|---|---|
| Power‑Added Efficiency | 53 % at 2.3 GHz |
| Gain | 11.5 dB at 2.3 GHz |
| Die Size | 36.0 × 81.0 × 4.0 mils (0.914 × 2.057 × 0.102 mm) |
| Drain Saturation Current (IDSS) | 4.410 A |
| Transconductance (GM) | 2.970 S |
| Pinch‑Off Voltage (VP) | -1.85 V |
| Gate‑Source Breakdown Voltage (BVGS) | -22 V |
| Gate‑Drain Breakdown Voltage (BVGD) | -22 V |
It is 9.0 W (approximately 39.5 dBm) at Vd = 8 V, Vg = ‑1.1 V.
A minimum of four gate bonds and eight drain bonds is recommended.
Use AuSn (80/20) solder at 300 °C for 30 seconds.