This document is a general product description of the HY62UF08401C. The HY62UF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits.
The document provides a general product description for the HY62UF08401C Series, which is designed for high speed and low power circuit technology. It features fully static operation with TTL compatible inputs and outputs, and includes a data retention mode that guarantees data validity at a minimum supply voltage of 1.2V.
| Memory Organization | 512K words by 8bits (4Mbit) |
|---|---|
| Operating Temperature | -40°C to 85°C |
| Package Type | 32-pin sTSOP |
| Read Cycle Time (55ns) | 55 ns |
The device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
Yes, it features fully static operation and Tri-state output.