Philips Semiconductors PHE13003AU Silicon Diffused Power Transistor Datasheet

This document is a Philips Semiconductors product specification sheet that introduces the features and characteristics of the PHE13003AU product.


Philips Semiconductors PHE13003AU Silicon Diffused Power Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
50 KB
Published
07 June, 2012
Updated
01 October, 2023
MD5 checksum
A5A39A67797A6E65E9D25FF58A7AA752

About this manual

The document describes the PHE13003AU as a high-voltage, high-speed planar-passivated npn power switching transistor intended for use in electronic lighting ballast applications, converters, and inverters. It is housed in an SOT533 envelope.

Key electrical characteristics include a collector-emitter voltage peak value of 700 V, a maximum DC collector current of 1.5 A, and a total power dissipation of 50 W at 25 °C. The datasheet details static and dynamic characteristics, thermal resistances, and mechanical dimensions.

What's inside

  • General Description
  • Quick Reference Data
  • Limiting Values
  • Static Characteristics
  • Dynamic Characteristics
  • Thermal Resistances
  • Mechanical Data

Specifications

Collector current (DC) (lc)- 1.5 A
Total power dissipation (Prot)- 50 W
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