Texas Instruments CD4011B/CD4012B/CD4023B CMOS NAND Gates Datasheet

This document is a PDF datasheet of CD4011B, CD4012B, and CD4023B types, including their packaging types, pin counts, package quantities, eco plan, lead/ball finish, MSL peak temperature, etc.


Texas Instruments CD4011B/CD4012B/CD4023B CMOS NAND Gates Datasheet - cover page
Brand
Texas Instruments
Category
Chips
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
519 KB
Published
06 June, 2012
Updated
30 September, 2023
MD5 checksum
26956067E702EF8BAC75788C9C9DD865

About this manual

The document details the CD4011B, CD4012B, and CD4023B types of CMOS NAND gates. These devices are supplied in various 14-lead packages, including hermetic dual-in-line ceramic (F3A_ suffix), plastic (E suffix), small-outline (M, MT, M96, NSR suffixes), and thin shrink small-outline (PWR or PW suffix) options.

Key specifications include a propagation delay time of 60 ns typical at CL = 50 pF and Vop = 10 V. The devices feature buffered inputs and outputs with standardized symmetrical output characteristics, meeting JEDEC Tentative Standard No. 13B requirements.

What's inside

  • Features
  • Maximum Ratings
  • Recommended Operating Conditions
  • Static Electrical Characteristics
  • Dynamic Electrical Characteristics
  • Terminal Assignments
  • Functional Diagrams
  • Package Option Addendum

Specifications

Propagation delay time (typ.)60 ns at CL = 50 pF, Vop = 10 V

Frequently asked questions

Are the inputs and outputs buffered?

Yes, all inputs and outputs are buffered.

What is the maximum supply voltage for these NAND gates?

The devices can operate with a DC supply voltage ranging from -0.5V to +20V.

How long does it take for the output to switch states under typical conditions?

The propagation delay time is typically 60 ns when the load capacitance is 50 pF and the supply voltage is 10 V.

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