This document introduces a N-channel power MOSFET μPA2727UT1A designed for DC/DC converter applications. The product features low on-state resistance, low QGD, and comes in a thin type surface mount package with a heat spreader.
This document is a datasheet for the NEC Electronics HPA2727UT1A, a switching N-channel power MOSFET. The device features low on-state resistance and is packaged in an 8-pin HVSON with a heat spreader. It is designed specifically for DC/DC converter applications.
| Package Type | 8-pin HVSON |
|---|---|
| On-state Resistance (Vgs=10V) | 9.6 mΩ MAX. |
| Drain Current (DC) | +16 A |
| Total Power Dissipation | 15 W |
| Channel Temperature | 150 °C |
The device supports a continuous drain current of +16 A and a pulsed drain current of +96 A.
The total power dissipation is rated at 46 W for pulses with a width of 10 seconds.
The channel temperature can reach up to 150 °C, while the storage temperature ranges from -55 to +150 °C.