STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1 is a N-channel 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET produced by ST.
This document provides technical specifications and characteristics for the STMicroelectronics SuperMESH™ series of N-channel Power MOSFETs. The devices are designed with a Zener-Protected Gate to source integrity, eliminating the need for external components while enhancing ESD capability and absorbing voltage transients.
The datasheet covers four specific models: STP6NK60Z, STP6NK60ZFP, STB6NK60Z, and STB6NK60Z-1. These devices are available in TO-220, TO-220FP, D2PAK, and I2PAK packages and are optimized for high current, high speed switching applications such as off-line power supplies, adapters, PFC circuits, and lighting.
| Drain-source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current at Tc=25°C | 6 A |
| Total Dissipation at To=25°C | 110 W / 32 W |
| Operating Junction Temperature Range | -55 to 150 °C |
| Gate-Source Breakdown Voltage | 30 V |
| Input Capacitance | 905 pF |
| Turn-on Delay Time (Typical) | 14 ns |
The devices are available in TO-220, TO-220FP, D2PAK, and I2PAK packages.
They are ideal for off-line power supplies, adapters, PFC circuits, and lighting applications.
No, the integrated Zener diodes avoid the usage of external components to protect device integrity.