This document is the technical specifications of DCR3780V28, including product features, application scenarios, voltage range, package form, key parameters, ordering information, etc.
This document is a preliminary data sheet for the Dynex Semiconductor DCR3780V28 Phase Control Thyristor. It outlines key features including double side cooling capability, high surge capacity up to 50.5kA, and suitability for high power drives and static switches.
The datasheet provides comprehensive electrical ratings such as a mean on-state current of 3780A and RMS value of 5938A under specific test conditions. It also details dynamic characteristics like dV/dt (1500V/µs) and di/dt (300A/µs), along with gate trigger parameters and thermal resistance values for both single and double side cooled configurations.
| RMS value of on-state current (Irms) | 5938 A |
|---|---|
| Continuous on-state current (Iav) | 5540 A |
| Surge non-repetitive on-state current | 50.5 kA |
| Peak reverse and off-state current | 200 mA |
| Max. linear rate of rise of off-state voltage (dV/dt) | 1500 V/µs |
| Rate of rise of on-state current (di/dt) Repetitive | 300 A/µs |
| Thermal resistance junction to case (Double side cooled) | 0.00746 °C/W |
| Thermal resistance case to heatsink (Double side) | 0.002 °CW |
| Virtual junction temperature (Reverse blocking) | -125 °C |
| Storage temperature range | -55 to 125 °C |
The maximum non-repetitive on-state current is 50.5 kA under a 10ms half sine wave condition at 125°C.
The document lists specific part numbers for voltages of 2400V (DCR3780V24), 2600V (DCR3780V26), and 2800V (DCR3780V28).
The virtual junction temperature for reverse blocking conditions is -125 °C.