The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Features include 3µm CMOS-SOS Technology, latch-up free, fast access time, total dose 106 Rad(Si), transient upset >1010 Rad(Si)/sec, SEU <10-10 Errors/bitday, single 5V supply, three-state output, low standby current, -55°C to +125°C operation, all inputs and outputs fully TTL or CMOS compatible, fully static operation, data retention at 2V supply.
The document describes the Dynex MA5114, a 4k Static RAM configured as 1024 x 4 bits. It is designed using 3um CMOS-SOS high performance, radiation hard technology and features full static operation without requiring clock or timing strobes.
Key specifications include an access time of 90ns typical, a total dose rating of 10^5 Rad(Si), and operation over a temperature range of -55°C to +125°C. The device supports both read and write cycles with three-state outputs and is compatible with TTL or CMOS logic levels.
| Configuration | 1024 x 4 bits |
|---|---|
| Access Time | 90ns Typ. |
| Total Dose | 10^5 Rad(Si) |
| Operating Temperature | -55°C to +125°C |
| Supply Voltage | Single 5V Supply |
The typical access time is 90ns.
Yes, it uses CMOS-SOS high performance, radiation hard technology with a total dose rating of 10^5 Rad(Si).
The device operates from -55°C to +125°C.