Update: 29 September, 2023
The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Features include 3µm CMOS-SOS Technology, latch-up free, fast access time, total dose 106 Rad(Si), transient upset >1010 Rad(Si)/sec, SEU <10-10 Errors/bitday, single 5V supply, three-state output, low standby current, -55°C to +125°C operation, all inputs and outputs fully TTL or CMOS compatible, fully static operation, data retention at 2V supply.
File format: PDF
Size: -
MD5 Checksum: 865259636543EE44889C7E779F7D6FB1
Publication date: 06 June, 2012
Downloads: -
PDF Link: DYNEX MA5114 Manual PDF